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BSC032NE2LSATMA1

Part No BSC032NE2LSATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 22A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 22A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 1200pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Maximum Rds On at Id,Vgs 3.2 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 130965-BSC032NE2LSATMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSC032NE2LSATMA1 CAD Model

Description

BSC032NE2LSATMA1

The versatile BSC032NE2LSATMA1 MOSFET is suitable for a variety of applications, designed to provide smooth operation with its advanced technology.

  • Voltage Rating: High threshold
  • Current Rating: Optimized to reduce power wastage
  • Compact and Durable Design

Applications:

  • High-Speed Switching
  • Lighting Controls
  • Embedded Systems

Features and Benefits:

  • Advanced Junction Technology for optimal performance
  • Thermal Stability ensures consistent operation
  • Cost-effective with long service life

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5821 $52.3890
210+ $0.4777 $100.3170
325+ $0.4627 $150.3775
450+ $0.4478 $201.5100
580+ $0.4329 $251.0820
775+ $0.3881 $300.7775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,610 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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