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BSC052N03S

Part No BSC052N03S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 18A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 2820pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 54W (Tc)
Maximum Rds On at Id,Vgs 5.2 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 201385-BSC052N03S
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC052N03S CAD Model

Description

Product Description

The BSC052N03S is a versatile MOSFET known for its solid performance and adaptability. It is engineered to support a wide range of industrial and consumer electronics applications, offering an excellent balance between cost and functionality.

Features and Benefits

  • Ultra-low on-resistance for enhanced efficiency.
  • Minimal power loss during operation.
  • High-frequency operation capability, ideal for fast-switching applications.

Applications

  • Industrial automation systems
  • Power supplies
  • Telecom equipment

Additional Details

Featuring a robust design, the BSC052N03S offers longevity and consistent performance, making it a valuable addition to both new and retrofit electronic projects. Its compact footprint allows for seamless integration into tight spaces where board real estate is critical.

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