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BSC052N08NS5ATMA1

Part No BSC052N08NS5ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 95A 8TDSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.8V @ 49μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 2900pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 5.2 mOhm @ 47.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 1024338-BSC052N08NS5ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC052N08NS5ATMA1 CAD Model

Description

The Infineon Technologies BSC052N08NS5ATMA1 is a N-channel MOSFET transistor with a drain-source breakdown voltage of 80V and a continuous drain current of 95A at Tc. Infineon Technologies

  • Channel Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 95A @ Tc
  • Power Dissipation: 2.5W (Ta), 83W (Tc)
  • Maximum Rds On: 5.2 mOhm @ Id,Vgs of 47.5A, 10V
  • Package: PG-TDSON-8 (8-PowerTDFN)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Gate-Source Threshold Voltage: 3.8V @ 49μA
  • Gate Charge: 40nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2971 $51.8840
85+ $1.2150 $103.2750
130+ $1.1739 $152.6070
185+ $1.0918 $201.9830
240+ $1.0508 $252.1920
300+ $1.0098 $302.9400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,700 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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