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BSC060N10NS3GATMA1

Part No BSC060N10NS3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 90A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 14.9A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 90μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 4900pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 112674-BSC060N10NS3GATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC060N10NS3GATMA1 CAD Model

Description

Features and Benefits of BSC060N10NS3GATMA1

  • High efficiency with minimal heat generation
  • Wide bandwidth operation
  • Easy integration with existing circuit designs
  • Heat-resistant packaging

Applications and Projects

  • LED lighting systems
  • High-efficiency power supplies
  • PFC (Power Factor Correction) applications
  • Renewable energy systems

Offering a strong balance between power efficiency and thermal management, the BSC060N10NS3GATMA1 is ideal for energy-conscious projects. It supports straightforward integration, making it versatile for innovative designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9200 $59.8000
135+ $0.8607 $116.1945
210+ $0.8311 $174.5310
300+ $0.7717 $231.5100
390+ $0.7420 $289.3800
490+ $0.7123 $349.0270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 47,740 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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