The OptiMOS™ 5 MOSFET is a high-performance N-Channel FET that is designed for use in discrete semiconductor products such as transistors, MOSFETs, and single-channel devices.
- Drain-to-Source Voltage: 150 V
- Continuous Drain Current: 114A @ 25°C
- Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 136μA
- Power Dissipation: 214W (Tc)
- Mounting: Surface mount, wettable flank technology
- Package: 8-PowerTDFN
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
- Vgs (Max): ±20V
- Operating Temperature Range: -55°C ~ 175°C (TJ)
- ECCN: EAR99
- Manufacturer: Infineon Technologies
- Other Names: 448-BSC074N15NS5ATMA1TR, 448-BSC074N15NS5ATMA1DKR, 448-BSC074N15NS5ATMA1CT, and SP004419136