The OptiMOS™ 5 MOSFET is a high-performance N-Channel FET that is designed for use in discrete semiconductor products such as transistors, MOSFETs, and single-channel devices.

• Drain-to-Source Voltage: 150 V
• Continuous Drain Current: 114A @ 25°C
• Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
• Vgs(th) (Max) @ Id: 4.6V @ 136μA
• Power Dissipation: 214W (Tc)
• Mounting: Surface mount, wettable flank technology
• Package: 8-PowerTDFN
• Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
• Vgs (Max): ±20V
• Operating Temperature Range: -55°C ~ 175°C (TJ)
• ECCN: EAR99
• Manufacturer: Infineon Technologies
• Other Names: 448-BSC074N15NS5ATMA1TR, 448-BSC074N15NS5ATMA1DKR, 448-BSC074N15NS5ATMA1CT, and SP004419136