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BSC085N025S

Part No BSC085N025S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 35A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 14A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 25μA
Max Gate Charge 14nC @ 5V
Max Input Capacitance 1800pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 201388-BSC085N025S
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSC085N025S CAD Model

Description

Overview

The BSC085N025S is a versatile MOSFET known for its low conduction losses and high-frequency switching capabilities. It is a prime choice for applications demanding high efficiency and reliability.

Features and Benefits

  • Enhanced Thermal Performance: Supports high power density applications.
  • Efficient Power Handling: Designed for low conduction losses.
  • Compact Package: Suitable for space-constrained designs.

Applications

  • Switching Regulators
  • Battery Management Systems
  • Inverters
  • Energy Storage Systems

Additional Details

With its efficient power handling capacity, the BSC085N025S is a critical component for improving system reliability and performance in various electronics.

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