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BSC0911NDATMA1

Name: BSC0911NDATMA1
Brand: Infineon Technologies
SKU: 439079
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	BSC0911NDATMA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET 2N-CH 25V 18A/30A TISON-8
Datasheet	BSC0911NDATMA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Logic Level Gate, 4.5V Drive
Drain-Source Breakdown Voltage	25V
Continuous Drain Current at 25°C	18A, 30A
Maximum Rds On at Id,Vgs	3.2 mOhm @ 20A, 10V
Gate-Source Threshold Voltage	2V @ 250μA
Max Gate Charge	12nC @ 4.5V
Max Input Capacitance	1600pF @ 12V
Maximum Power Dissipation	1W
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TISON-8
Win Source Part Number	1024345-BSC0911NDATMA1
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian BSC0911NDATMA1 CAD Model

Alternative Products

Description

The Infineon Technologies 1024345-BSC0911NDATMA1 is a dual N-channel asymmetrical FET with a maximum power dissipation of 1W.

Power Dissipation: 1W
Drain-Source Breakdown Voltage: 25V
Gate-Source Threshold Voltage: 2V @ 250μA
Maximum Rds On: 3.2 mOhm @ 20A, 10V
Gate Type: logic level gate and 4.5V drive
Maximum Gate Charge: 12nC @ 4.5V
Maximum Input Capacitance: 1600pF @ 12V
Temperature Range: -55℃ to 150℃

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
45+	$1.3192	$59.3640
110+	$1.0825	$119.0750
170+	$1.0487	$178.2790
230+	$1.0148	$233.4040
295+	$0.9810	$289.3950
395+	$0.8794	$347.3630

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 41,080 pieces

MOQ: 45 pcs

Order Increment : 1 pcs

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