The Infineon Technologies BSC150N03LDGATMA1 is a dual N-Channel OptiMOS™ MOSFET, designed for use in various applications.

• Package: Tape and reel
• Standard Package: 5,000
• Gate Type: Logic level gate
• Drain to Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 8A @ 25°C
• Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250μA
• Power Max: 26W
• Package/Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-4
• Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
• Temperature Range: -55°C to 150°C (TJ)
• MSL Level: 1 (Unlimited)
• REACH Status: REACH Unaffected
• HTSUS Code: 8541.29.0095