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BSC440N10NS3GATMA1

Part No BSC440N10NS3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 18A TDSON-8 / Trans MOSFET N-CH 100V 5.3A Automotive 8-Pin TDSON EP T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 3.5V @ 12μA
Gate Charge (Qg) (Maximum) @ Vgs 10.8nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 810pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 29W (Tc)
Rds On (Maximum) @ Id, Vgs 44 mOhm @ 12A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-TDSON-8
Package 8-PowerTDFN
Win Source Part Number 770416-BSC440N10NS3GATMA1
Popularity Medium
Supply and Demand Status Limited
Family Name BSC440N10NS3GATMA1
Introduction Date July 09, 2009
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian BSC440N10NS3GATMA1 CAD Model

Description

The BSC440N10NS3GATMA1 is a N-channel MOSFET transistor from Infineon Technologies.

  • Series: OptiMOS
  • Drain-Source Voltage: 100V
  • Continuous Drain Current: 5.3A @ 25°C
  • Drain-Source On-Resistance (Rds On): 44 mOhm @ 12A @ 10V
  • Gate Charge (Qg): 10.8nC @ 10V
  • Input Capacitance (Ciss): 810pF @ 50V
  • Maximum Vgs: ±20V
  • Operating Temperature Range: -55°C to 150°C
  • Package: PG-TDSON-8
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7277 $50.9390
170+ $0.5971 $101.5070
260+ $0.5784 $150.3840
360+ $0.5598 $201.5280
465+ $0.5411 $251.6115
620+ $0.4851 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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