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BSC520N15NS3GATMA1

Part No BSC520N15NS3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 21A TDSON-8
Datasheet
Sample
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Gate-Source Threshold Voltage 4V @ 35μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 890pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 52 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 111479-BSC520N15NS3GATMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSC520N15NS3GATMA1 CAD Model

Description

Product Description

The BSC520N15NS3GATMA1 is a high-performance N-channel MOSFET engineered for exceptional power efficiency and reliability in demanding environments. It provides low on-resistance and is optimized for high-speed applications.

Features and Benefits

  • Remarkably low on-resistance for enhanced efficiency.
  • High-speed switching capabilities.
  • Excellent thermal performance for stable operations.

Applications

  • Inverter circuits
  • Renewable energy systems
  • Powertrain management
  • Robotic systems

Choose the BSC520N15NS3GATMA1 for reliable operation in sophisticated power applications where efficiency is crucial.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.0764 $52.9932
27+ $3.8184 $103.0968
41+ $3.6894 $151.2654
59+ $3.4314 $202.4526
76+ $3.3024 $250.9824
95+ $3.1734 $301.4730
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,870 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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