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BSC600N25NS3G
Same model may have multiple batches, images only for reference.

BSC600N25NS3G

Part No BSC600N25NS3G
Manufacturer Infineon Technologies
Catalog TRANSISTORS
Description MOSFETs N-Ch 250V 25A TDSON-8 OptiMOS 3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Technology Si
Mounting Style SMD/SMT
Package / Case TDSON-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 250 V
Id - Continuous Drain Current 25 A
Rds On - Drain-Source Resistance 50 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 29 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 125 W
Channel Mode Enhancement
Tradename OptiMOS
Series OptiMOS 3
Packaging Cut Tape
Packaging MouseReel
Packaging Reel
Configuration Single
Height 1.27 mm
Length 5.9 mm
Transistor Type 1 N-Channel
Type OptiMOS 3 Power-Transistor
Width 5.15 mm
Brand Infineon Technologies
Forward Transconductance - Min 25 S
Fall Time 8 ns
Product Type MOSFETs
Rise Time 10 ns
Standard Pack Qty 5000
Subcategory Transistors
Typical Turn-Off Delay Time 22 ns
Typical Turn-On Delay Time 10 ns
Ultra Librarian 3D Model Ultra Librarian BSC600N25NS3G CAD Model

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