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BSC750N10ND G Real Image BSC750N10ND G Real Image
Same model may have multiple batches, images only for reference.
BSC750N10ND G Real Image BSC750N10ND G Real Image
BSC750N10ND G Real Image BSC750N10ND G Real Image
Same model may have multiple batches, images only for reference.

BSC750N10ND G

Part No BSC750N10ND G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 100V 3.2A 8TDSON
Datasheet
BSC750N10ND G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3.2A
Maximum Rds On at Id,Vgs 75 mOhm @ 13A, 10V
Gate-Source Threshold Voltage 4V @ 12μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 720pF @ 50V
Maximum Power Dissipation 26W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Win Source Part Number 097368-BSC750N10ND G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC750N10ND G CAD Model

Description

Product Description

The BSC750N10ND G is a next-generation N-channel MOSFET notable for its superior efficiency and reliability. Designed to manage significant power loads, it offers industry-leading performance and versatility.

Features and Benefits

  • Enhanced Power Dissipation: Capable of handling large power loads efficiently.
  • Robust Design: Durable construction for long-term reliability in demanding environments.
  • Compact Package: Small form factor without compromising performance.

Applications

  • Power Management Systems
  • Battery Protection Circuits
  • Solar Inverter Systems

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