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Same model may have multiple batches, images only for reference.
BSD223P Infineon Technologies
Same model may have multiple batches, images only for reference.

BSD223P

Part No BSD223P
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description MOSFET 2P-CH 20V 0.39A SOT363
Datasheet
BSD223P Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 390mA
Rds On (Max) @ Id, Vgs 1.2Ohm @ 390mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1.5µA
Gate Charge (Qg) (Max) @ Vgs 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 56pF @ 15V
Power - Max 250mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-PO
Base Product Number BSD223
Standard Package 10,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 572027-BSD223P
Ultra Librarian 3D Model Ultra Librarian BSD223P CAD Model

Description

The BSD223P is a MOSFET transistor array from Infineon Technologies.

  • Series: OptiMOS™
  • Channel Type: 2 P-channel MOSFETs
  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 390mA @ 25°C
  • Rds On (Max): 1.2Ohm @ 390mA and 4.5V
  • Package: Surface mount (6-VSSOP)
  • Gate Charge (Qg): 0.62nC @ 4.5V
  • Operating Temperature: -55°C to 150°C
  • Product Status: Obsolete
  • Base Product Number: BSD223

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