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BSD235NH6327XTSA1

Part No BSD235NH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.95A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 950mA
Maximum Rds On at Id,Vgs 350 mOhm @ 950mA, 4.5V
Gate-Source Threshold Voltage 1.2V @ 1.6μA
Max Gate Charge 0.32nC @ 4.5V
Max Input Capacitance 63pF @ 10V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 108619-BSD235NH6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSD235NH6327XTSA1 CAD Model

Description

Features and Benefits

  • Advanced thermal management
  • Enhanced gate charge characteristics
  • Robust construction for high reliability
  • Compact footprint for space-saving designs

Applications

  • Motor drive controls
  • LED lighting systems
  • Power management in servers
  • Robotic systems

The BSD235NH6327XTSA1 provides advanced features for applications requiring efficient thermal management and robust performance, ensuring longevity and reliability in demanding environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2038 $50.9500
600+ $0.1672 $100.3200
930+ $0.1620 $150.6600
1,280+ $0.1568 $200.7040
1,655+ $0.1515 $250.7325
2,210+ $0.1359 $300.3390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 72,850 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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