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BSD816SNL6327

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Part No	BSD816SNL6327
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	SMALL SIGNAL N-CHANNEL MOSFET
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™2
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 2.5V
Rds On (Max) @ Id, Vgs	160mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id	950mV @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs	0.6 nC @ 2.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	180 pF @ 10 V
Power Dissipation (Max)	500mW (Ta)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT363-6-6
Package / Case	6-VSSOP, SC-88, SOT-363
Standard Package	1 pcs
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.21.0095
Win Source Part Number	864691-BSD816SNL6327
Ultra Librarian 3D Model	Ultra Librarian BSD816SNL6327 CAD Model

Alternative Products

Description

The 864691-BSD816SNL6327 is a N-Channel MOSFET transistor from the OptiMOS™2 series by Infineon Technologies.

Vdss: 20V
Id: 1.4A @ 25°C
Rds On: 160mOhm @ 1.4A and 2.5V
Qg: 0.6 nC @ 2.5V
Ciss: 180 pF @ 10V
Mounting: surface mountable
Package: 6-VSSOP, SC-88, SOT-363
Operating Temperature Range: -55°C to 150°C
Status: active product

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