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Same model may have multiple batches, images only for reference.
BSD840NH6327XTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSD840NH6327XTSA1

Part No BSD840NH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.88A SOT363
Datasheet
BSD840NH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 880mA
Maximum Rds On at Id,Vgs 400 mOhm @ 880mA, 2.5V
Gate-Source Threshold Voltage 750mV @ 1.6μA
Max Gate Charge 0.26nC @ 2.5V
Max Input Capacitance 78pF @ 10V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 1024367-BSD840NH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSD840NH6327XTSA1 CAD Model

Description

The Infineon Technologies 1024367-BSD840NH6327XTSA1 is a dual N-channel FET that is ideal for use in discrete semiconductor products.

  • Maximum Power Dissipation: 500mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 880mA
  • Maximum Rds On at Id,Vgs: 400 mOhm @ 880mA, 2.5V
  • Gate-Source Threshold Voltage: 750mV @ 1.6μA
  • Maximum Gate Charge: 0.26nC @ 2.5V
  • Maximum Input Capacitance: 78pF @ 10V
  • Packaging: PG-SOT363-6

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Pricing & Ordering

Quantity Unit Price Ext. Price
490+ $0.1027 $50.3230
1,190+ $0.0843 $100.3170
1,840+ $0.0816 $150.1440
2,535+ $0.0790 $200.2650
3,275+ $0.0764 $250.2100
4,380+ $0.0685 $300.0300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 137,200 pieces
MOQ: 490 pcs
Order Increment : 1 pcs
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