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Same model may have multiple batches, images only for reference.
BSL207NH6327XTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSL207NH6327XTSA1

Part No BSL207NH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 2.1A 6TSOP
Datasheet
BSL207NH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate, 2.5V Drive
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.1A
Maximum Rds On at Id,Vgs 70 mOhm @ 2.1A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 11μA
Max Gate Charge 2.1nC @ 4.5V
Max Input Capacitance 419pF @ 10V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSOP-6-1
Win Source Part Number 1024383-BSL207NH6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSL207NH6327XTSA1 CAD Model

Description

The Infineon Technologies 1024383-BSL207NH6327XTSA1 is a Dual N-Channel MOSFET with a Logic Level Gate and 2.5V Drive.

  • Operating Temperature Range: -55°C to 150°C
  • Package: PG-TSOP-6-1
  • Maximum Power Dissipation: 500mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 2.1A
  • Gate-Source Threshold Voltage: 1.2V @ 11μA
  • Maximum Gate Charge: 2.1nC @ 4.5V
  • Maximum Input Capacitance: 419pF @ 10V
  • Maximum Rds On @ Id,Vgs: 70 mOhm @ 2.1A, 4.5V

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