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Same model may have multiple batches, images only for reference.
BSL207SPL6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSL207SPL6327HTSA1

Part No BSL207SPL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 6A TSOP-6 / P-Channel 20 V 6A (Ta) 2W (Ta) Surface Mount PG-TSOP6-6
Datasheet
BSL207SPL6327HTSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 41mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1007 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSOP6-6
Package / Case SOT-23-6 Thin, TSOT-23-6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000 pcs
Win Source Part Number 1381625-BSL207SPL6327HTSA1
Ultra Librarian 3D Model Ultra Librarian BSL207SPL6327HTSA1 CAD Model

Description

The Infineon Technologies OptiMOS™ is a P-Channel MOSFET (Metal Oxide Field Effect Transistor) with a drain to source voltage (Vdss) of 20V. OptiMOS™ is designed by Infineon Technologies.

  • Channel Type: P-Channel
  • Vdss: 20V
  • Category: Discrete Semiconductor Products
  • Type: Single FETs, MOSFETs
  • Id: 6A
  • Rds On (Max): 41mOhm @ 6A, 4.5V
  • Package Type: Tape & Reel
  • Mounting Type: Surface Mount
  • Status: Obsolete

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