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Same model may have multiple batches, images only for reference.
BSL214NH6327XTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSL214NH6327XTSA1

Part No BSL214NH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 1.5A 6TSOP
Datasheet
BSL214NH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate, 2.5V Drive
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.5A
Maximum Rds On at Id,Vgs 140 mOhm @ 1.5A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 3.7μA
Max Gate Charge 0.8nC @ 5V
Max Input Capacitance 143pF @ 10V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSOP6-6
Win Source Part Number 1024385-BSL214NH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSL214NH6327XTSA1 CAD Model

Description

The Infineon Technologies BSL214NH6327XTSA1 is a dual N-channel MOSFET transistor with a drain-source breakdown voltage of 20V and a continuous drain current of 1.5A @ 25°C.

  • Manufacturer: Infineon Technologies
  • Product Name: BSL214NH6327XTSA1
  • Channel Type: Dual N-channel
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 1.5A @ 25°C
  • Maximum Rds On: 140 mOhm @ 1.5A and 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Gate Charge: 0.8nC @ 5V
  • Maximum Input Capacitance: 143pF @ 10V
  • Mounting Technology: surface-mount
  • Power Dissipation: 500mW
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: PG-TSOP6-6

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