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Same model may have multiple batches, images only for reference.
BSL306N L6327 Real Image
Same model may have multiple batches, images only for reference.

BSL306N L6327

Part No BSL306N L6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet 2N-CH 30V 2.3A 6TSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSOP
Continuous Drain Current (ID) 2.3 A
Drain to Source Breakdown Voltage 30 V
Drain to Source Resistance 57 mΩ
Drain to Source Voltage (Vdss) 30 V
Element Configuration Dual
Fall Time 2.3 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 275 pF
Maximum Operating Temperature 150 °C
Max Power Dissipation 500 mW
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 6
Power Dissipation 500 mW
Rds On Max 57 mΩ
Rise Time 2.3 ns
RoHS Compliant
Turn-Off Delay Time 8.3 ns
Turn-On Delay Time 4.4 ns
Win Source Part Number 1049680-BSL306N L6327
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BSL306N L6327 CAD Model

Description

The BSL306NL6327 is an RF MOSFET transistor with a drain-source voltage of 30V and input capacitance of 275pF.

  • Power Dissipation: 500mW
  • Package: TSOP
  • Rise Time: 2.3ns
  • Fall Time: 2.3ns
  • Operating Temperature Range: -55°C to 150°C
  • Application: RF applications

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