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Same model may have multiple batches, images only for reference.
BSL306NL6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSL306NL6327HTSA1

Part No BSL306NL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 2.3A 6TSOP
Datasheet
BSL306NL6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.3A
Maximum Rds On at Id,Vgs 57 mOhm @ 2.3A, 10V
Gate-Source Threshold Voltage 2V @ 11μA
Max Gate Charge 1.6nC @ 5V
Max Input Capacitance 275pF @ 15V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSOP6-6
Win Source Part Number 1024390-BSL306NL6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSL306NL6327HTSA1 CAD Model

Description

The Infineon Technologies 441230 MOSFET is a 2 N-Channel (Dual) transistor that is designed for use in discrete semiconductor products.

  • Channel Type: 2 N-Channel (Dual)
  • Gate Type: Logic Level
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 2.3A
  • Gate-Source Threshold Voltage: 2V @ 11μA
  • Maximum Rds On @ Id,Vgs: 57 mOhm @ 2.3A, 10V
  • Package: PG-TSOP6-6
  • Mounting: SMD (SMT)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Status: Obsolete (EOL)

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