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BSL308PEL6327HTSA1 Real Image1 BSL308PEL6327HTSA1 Real Image2
Same model may have multiple batches, images only for reference.
BSL308PEL6327HTSA1 Real Image1 BSL308PEL6327HTSA1 Real Image2
BSL308PEL6327HTSA1 Real Image1 BSL308PEL6327HTSA1 Real Image2
Same model may have multiple batches, images only for reference.

BSL308PEL6327HTSA1

Part No BSL308PEL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 2A 6TSOP
Datasheet
BSL308PEL6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2A
Maximum Rds On at Id,Vgs 80 mOhm @ 2A, 10V
Gate-Source Threshold Voltage 1V @ 11μA
Max Gate Charge 5nC @ 10V
Max Input Capacitance 500pF @ 15V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSOP6-6
Win Source Part Number 1024394-BSL308PEL6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSL308PEL6327HTSA1 CAD Model

Description

The BSL308PEL6327HTSA1 is a dual P-Channel FET transistor from Infineon Technologies, designed for use in a variety of applications.

  • Family: Discrete Semiconductor Products
  • Lifecycle Status: Obsolete (EOL)
  • Supply and Demand Status: Balance
  • Maximum Power Dissipation: 500mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 2A
  • Gate-Source Threshold Voltage: 1V @ 11μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3386 $120.4740
135+ $1.2971 $175.1085
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,800 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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