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Same model may have multiple batches, images only for reference.
BSL314PEH6327XTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSL314PEH6327XTSA1

Part No BSL314PEH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 1.5A 6TSOP
Datasheet
BSL314PEH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate, 4.5V Drive
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.5A
Maximum Rds On at Id,Vgs 140 mOhm @ 1.5A, 10V
Gate-Source Threshold Voltage 2V @ 6.3μA
Max Gate Charge 2.9nC @ 10V
Max Input Capacitance 294pF @ 15V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSOP6-6
Win Source Part Number 1024395-BSL314PEH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSL314PEH6327XTSA1 CAD Model

Description

The Infineon Technologies BSL314PEH6327XTSA1 is a dual P-channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 500mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 1.5A
  • Maximum Rds On @ Id,Vgs: 140 mOhm @ 1.5A, 10V
  • Gate-Source Threshold Voltage: 2V @ 6.3μA
  • Maximum Gate Charge: 2.9nC @ 10V
  • Package: PG-TSOP6-6
  • Mounting: SMD (SMT)
  • Supply and Demand: Sufficient

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