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Same model may have multiple batches, images only for reference.
BSL314PEL6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSL314PEL6327HTSA1

Part No BSL314PEL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 1.5A 6TSOP
Datasheet
BSL314PEL6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.5A
Maximum Rds On at Id,Vgs 140 mOhm @ 1.5A, 10V
Gate-Source Threshold Voltage 2V @ 6.3μA
Max Gate Charge 2.9nC @ 10V
Max Input Capacitance 294pF @ 15V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSOP6-6
Win Source Part Number 1024396-BSL314PEL6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSL314PEL6327HTSA1 CAD Model

Description

The Infineon Technologies BSL314PEL6327HTSA1 is a 2 P-Channel (Dual) MOSFET with a drain-source breakdown voltage of 30V and continuous drain current of 1.5A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 1.5A @ 25°C
  • Maximum Power Dissipation: 500mW
  • Maximum Rds On: 140 mOhm @ 1.5A, 10V
  • Maximum Gate-Source Voltage: Not Required
  • Gate-Source Threshold Voltage: 2V @ 6.3μA
  • Maximum Gate Charge: 2.9nC @ 10V
  • Maximum Input Capacitance: 294pF @ 15V
  • Suitable for: Discrete Semiconductor Products
  • Mounting: SMD (SMT)
  • Case/Package: PG-TSOP6-6

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