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Same model may have multiple batches, images only for reference.
BSL315PL6327HTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSL315PL6327HTSA1

Part No BSL315PL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 1.5A TSOP-6
Datasheet
BSL315PL6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.5A
Maximum Rds On at Id,Vgs 150 mOhm @ 1.5A, 10V
Gate-Source Threshold Voltage 2V @ 11μA
Max Gate Charge 2.3nC @ 5V
Max Input Capacitance 282pF @ 15V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSOP6-6
Win Source Part Number 1024397-BSL315PL6327HTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSL315PL6327HTSA1 CAD Model

Description

The Infineon Technologies BSL315PL6327HTSA1 is a dual 2 P-channel FET with a maximum drain-source breakdown voltage of 30V.

  • Maximum Drain-Source Breakdown Voltage: 30V
  • Maximum Power Dissipation: 500mW
  • Continuous Drain Current: 1.5A @ 25°C
  • Package: PG-TSOP6-6
  • Mounting: SMD technology
  • Gate-Source Threshold Voltage: 2V @ 11μA
  • Maximum Gate Charge: 2.3nC @ 5V
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Sufficient

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