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BSL802SNL6327HTSA1 Real Image1 BSL802SNL6327HTSA1 Real Image2
Same model may have multiple batches, images only for reference.
BSL802SNL6327HTSA1 Real Image1 BSL802SNL6327HTSA1 Real Image2
BSL802SNL6327HTSA1 Real Image1 BSL802SNL6327HTSA1 Real Image2
Same model may have multiple batches, images only for reference.

BSL802SNL6327HTSA1

Part No BSL802SNL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 7.5A TSOP6
Datasheet
BSL802SNL6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V
Gate-Source Threshold Voltage 750mV @ 30μA
Max Gate Charge 4.7nC @ 2.5V
Max Input Capacitance 1347pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 7.5A, 2.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSOP6-6
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1024402-BSL802SNL6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSL802SNL6327HTSA1 CAD Model

Description

The BSL802SNL6327HTSA1 is an N-channel MOSFET from Infineon Technologies that comes in a PG-TSOP6-6 package.

  • Maximum Rds On: 22 mOhm @ 7.5A, 2.5V
  • Maximum Gate-Source Voltage: ±8V
  • Drain-Source Breakdown Voltage: 20V

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