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Same model may have multiple batches, images only for reference.
BSM150GB120DLCHOSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSM150GB120DLCHOSA1

Part No BSM150GB120DLCHOSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Modules
Description IGBT 2 MED POWER 62MM-1
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 300A
Power - Max 1250W
Vce(on) (Maximum) at Vge, Ic 2.6V at 15V, 150A
Current - Collector Cutoff (Maximum) 5mA
Input Capacitance (Cies) at Vce 11nF at 25V
Input Standard
NTC Thermistor No
Temperature Range - Operating -40°C ~ 125°C
Mounting Style Chassis Mount
Manufacturer Package Module
Supplier Device Package Module
Manufacturer Pack Quantity 10
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813992-BSM150GB120DLCHOSA1
Ultra Librarian 3D Model Ultra Librarian BSM150GB120DLCHOSA1 CAD Model

Description

The BSM150GB120DLCHOSA1 is a half-bridge IGBT module from Infineon Technologies.

  • Maximum Power: 1250W
  • Voltage Breakdown: 1200V
  • Current Collector Cutoff: 5mA
  • Current Collector (Ic): 300A
  • Mounting: Chassis
  • Temperature Range: -40°C to 125°C
  • Input: Standard
  • NTC Thermistor: No
  • Supply and Demand Status: Limited
  • Manufacturer Package Quantity: 10
  • MSL Level: 1
  • Input Capacitance (Cies) @ Vce: 11nF @ 25V
  • Vce(on) (Maximum) @ Vge, Ic: 2.6V @ 15V, 150A

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