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BSO065N03MSGXUMA1

Name: BSO065N03MSGXUMA1
Brand: Infineon Technologies
SKU: 439145
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	BSO065N03MSGXUMA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 13A 8DSO
Datasheet	BSO065N03MSGXUMA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2V @ 250μA
Max Gate Charge	40nC @ 10V
Max Input Capacitance	3100pF @ 15V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	1.56W (Ta)
Maximum Rds On at Id,Vgs	6.5 mOhm @ 16A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-DSO-8
Dimension	8-SOIC (0.154", 3.90mm Width)
Win Source Part Number	1024411-BSO065N03MSGXUMA1
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian BSO065N03MSGXUMA1 CAD Model

Alternative Products

Description

The Infineon Technologies 1024411-BSO065N03MSGXUMA1 is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 13A at 25°C.

Manufacturer: Infineon Technologies
Channel Type: N-channel
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current: 13A @ 25°C
Maximum Power Dissipation: 1.56W @ Ta
Package: PG-DSO-8
Mounting Type: Surface Mount
Gate-Source Threshold Voltage: 2V @ 250μA
Maximum Gate Charge: 40nC @ 10V
Maximum Input Capacitance: 3100pF @ 15V
Maximum Rds On at Id, Vgs: 6.5 mOhm @ 16A, 10V
Status: Obsolete(EOL)
Popularity: Medium

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