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Same model may have multiple batches, images only for reference.
SIHP28N60EF-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP28N60EF-GE3

Part No SIHP28N60EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 123mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2714 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP28
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277880-SIHP28N60EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP28N60EF-GE3 CAD Model

Description

The SIHP28N60EF-GE3 is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage: 600 V
  • Continuous Drain Current: 28A (Tc)
  • Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Power Dissipation: 250W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
  • Mounting Type: Through Hole
  • Package: TO-220-3

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Quantity Unit Price Ext. Price
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37+ $3.1681 $117.2197
57+ $3.0690 $174.9330
78+ $2.9700 $231.6600
101+ $2.8710 $289.9710
135+ $2.5740 $347.4900
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Availability: 500 pieces
MOQ: 15 pcs
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