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Same model may have multiple batches, images only for reference.
BSO200P03S H Infineon Technologies
Same model may have multiple batches, images only for reference.

BSO200P03S H

Part No BSO200P03S H
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFETs P-Ch -30V -9.1A DSO-8 OptiMOS P
Datasheet
BSO200P03S H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Category Transistors – FETs, MOSFETs – Single
Technology Si
Mounting Style SMD/SMT
Package / Case SOIC-8
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 9.1 A
Vgs - Gate-Source Voltage - 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage 1.5 V
Ultra Librarian 3D Model Ultra Librarian BSO200P03S H CAD Model

Description

Features

  • P-Channe
  • Enhancement mode
  • Logic leve
  • 150°C operating temperature
  • Qualified according JEDEC for target applications
  • Pb-free lead plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21

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Quantity Unit Price Ext. Price
35+ $1.6008 $56.0280
80+ $1.3135 $105.0800
120+ $1.2724 $152.6880
165+ $1.2314 $203.1810
215+ $1.1903 $255.9145
285+ $1.0672 $304.1520
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Availability: 12,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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