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Same model may have multiple batches, images only for reference.
BSO303SPH Real Image
Same model may have multiple batches, images only for reference.

BSO303SPH

Part No BSO303SPH
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description 7.2A, 30V, 0.021OHM, P-CHANNEL,
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series SIPMOS®
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2330 pF @ 25 V
Power Dissipation (Max) 1.56W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-DSO-8-1
Package / Case 8-SOIC (0.154", 3.90mm Width)
Standard Package 866 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 819742-BSO303SPH
Ultra Librarian 3D Model Ultra Librarian BSO303SPH CAD Model

Description

The 819742-BSO303SPH is a P-Channel MOSFET transistor from Infineon Technologies.

  • Series: SIPMOS™
  • Applications: Discrete semiconductors
  • Drain to source voltage (Vdss): 30V
  • Continuous drain current (Id): 7.2A
  • Rds On (Max): 21mOhm @ 9.1A and 10V
  • Gate charge (Qg): 54 nC @ 10V
  • Input capacitance (Ciss): 2330 pF @ 25V
  • Temperature range: -55°C to 150°C
  • Package: 8-SOIC

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6818 $51.1350
180+ $0.5595 $100.7100
280+ $0.5420 $151.7600
385+ $0.5245 $201.9325
495+ $0.5070 $250.9650
660+ $0.4546 $300.0360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,541 pieces
MOQ: 75 pcs
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