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Same model may have multiple batches, images only for reference.
BSP296 E6433 Real Image
Same model may have multiple batches, images only for reference.

BSP296 E6433

Part No BSP296 E6433
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1.1A SOT-223
Datasheet
BSP296 E6433 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 400μA
Max Gate Charge 17.2nC @ 10V
Max Input Capacitance 364pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.79W (Ta)
Maximum Rds On at Id,Vgs 700 mOhm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 201411-BSP296 E6433
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian BSP296 E6433 CAD Model

Description

Description

The BSP296 E6433 is an upgraded version of the BSP296, offering enhanced electrical characteristics for high-performance applications. It is engineered to deliver superior conductivity and operational efficiency while maintaining a compact form factor.

Features and Benefits

  • Optimized on-state resistance for higher efficiency
  • Improved thermal performance for various applications
  • Rugged construction for enhanced durability
  • Fast switching capabilities for precise control

Applications

  • Power supply modules
  • Drive circuits for LEDs
  • Signal processing equipment
  • Battery-operated devices

Additional Details

The BSP296 E6433 is designed to meet the demands of modern electronic devices by providing reliable and consistent performance, enabling longer device lifecycle and reduced energy consumption.

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