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Same model may have multiple batches, images only for reference.
BSP298H6327XUSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSP298H6327XUSA1

Part No BSP298H6327XUSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 500MA SOT-223
Datasheet
BSP298H6327XUSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 3 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 1024439-BSP298H6327XUSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSP298H6327XUSA1 CAD Model

Description

The Infineon Technologies BSP298H6327XUSA1 is an N-Channel MOSFET designed for use in high-performance power conversion applications.

  • Maximum Power Dissipation: 1.8W (Ta)
  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current: 500mA (Ta)
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Input Capacitance: 400pF @ 25V
  • Maximum Rds On: 3 Ohm @ 500mA, 10V
  • Package: PG-SOT223-4

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Quantity Unit Price Ext. Price
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65+ $1.8262 $118.7030
100+ $1.7692 $176.9200
135+ $1.7121 $231.1335
175+ $1.6550 $289.6250
235+ $1.4839 $348.7165
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