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BSP299L6327

Name: BSP299L6327
Brand: Infineon Technologies
SKU: 1027902
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	BSP299L6327
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	Trans MOSFET N-CH 500V 0.4A 4-Pin(3+Tab) SOT-223 T/R
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Mounting	SMD (SMT)
Case / Package	SOT-223
Continuous Drain Current (ID)	400 mA
Current Rating	400 mA
Drain to Source Breakdown Voltage	500 V
Drain to Source Resistance	4 Ω
Drain to Source Voltage (Vdss)	500 V
Dual Supply Voltage	500 V
Fall Time	15 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	400 pF
Lead Free	Yes
Maximum Operating Temperature	150 °C
Max Power Dissipation	1.8 W
Min Operating Temperature	-55 °C
Mount	Surface Mount, Through Hole
Nominal Vgs	3 V
Number of Elements	1
Number of Pins	4
Power Dissipation	1.8 W
Radiation Hardening	No
Rds On Max	4 Ω
REACH SVHC	No SVHC
Rise Time	15 ns
RoHS	Compliant
Termination	SMD/SMT
Threshold Voltage	3 V
Turn-Off Delay Time	55 ns
Turn-On Delay Time	8 ns
Voltage Rating (DC)	500 V
Width	6.7 mm
Win Source Part Number	1027902-BSP299L6327
Categories	Transistors - FETs, MOSFETs - RF
Manufacturer	Infineon Technologies
Popularity	Low
Supply and Demand Status	Shortage
Ultra Librarian 3D Model	Ultra Librarian BSP299L6327 CAD Model

Alternative Products

Description

The Infineon Technologies 1027902-BSP299L6327 is an RF transistor with a drain to source voltage (Vdss) of 500V.

Drain to Source Voltage (Vdss): 500V
Mounting Type: SMD (SMT)
Current Rating: 400mA
Package/Case: SOT-223
Maximum Power Dissipation: 1.8W

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