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Same model may have multiple batches, images only for reference.
BSP300L6327HUSA1 Real Image
Same model may have multiple batches, images only for reference.

BSP300L6327HUSA1

Part No BSP300L6327HUSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 190MA SOT223-4 / N-Channel 800 V 190mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
Datasheet
BSP300L6327HUSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series SIPMOS®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 230 pF @ 25 V
Power Dissipation (Max) 1.8W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4-21
Package / Case TO-261-4, TO-261AA
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1338910-BSP300L6327HUSA1
Ultra Librarian 3D Model Ultra Librarian BSP300L6327HUSA1 CAD Model

Description

The BSP300L6327HUSA1 is a part of the SIPMOS series and is designed for use in discrete semiconductor products.

  • Series: SIPMOS
  • Type: MOSFET
  • FET Type: N-Channel
  • Drain to Source Voltage: 800V
  • Power Dissipation: 1.8W
  • Gate-Source Voltage: ±20V
  • Package Type: TO-261-4, TO-261AA
  • Mounting Type: Surface Mount
  • Operating Temperature: -55°C to 150°C
  • Applications: Power Supplies, Motor Control, and Lighting

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