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BSP318S E6327 Real Image
Same model may have multiple batches, images only for reference.

BSP318S E6327

Part No BSP318S E6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2.6A SOT-223
Datasheet
BSP318S E6327 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 380pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 2.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 1024446-BSP318S E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSP318S E6327 CAD Model

Description

The Infineon Technologies BSP318S E6327 is an N-channel MOSFET transistor that is commonly used in discrete semiconductor products.

  • Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current (Max): 2.6A @ 25°C
  • Rds On (Max): 90 mOhm @ 2.6A, 10V
  • Gate-Source Voltage (Max): ±20V
  • Input Capacitance (Max): 380pF @ 25V
  • Package: PG-SOT223-4
  • Mounting Type: Surface-Mount
  • Power Dissipation: 1.8W (Ta)
  • Temperature Range: -55°C to 150°C (TJ)

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275+ $0.4225 $116.1875
425+ $0.4093 $173.9525
585+ $0.3962 $231.7770
755+ $0.3829 $289.0895
1,010+ $0.3433 $346.7330
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