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BSP320SL6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSP320SL6327HTSA1

Part No BSP320SL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2.9A SOT-223
Datasheet
BSP320SL6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 20μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 340pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 120 mOhm @ 2.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 1024448-BSP320SL6327HTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSP320SL6327HTSA1 CAD Model

Description

The Infineon Technologies BSP320SL6327HTSA1 is an N-Channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 2.9A @ 25°C.

  • Maximum Rds On: 120 mOhm @ 2.9A and 10V
  • Gate-Source Threshold Voltage: 4V @ 20μA
  • Package: PG-SOT223-4
  • Power Dissipation (Ta): 1.8W
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4817 $57.8040
285+ $0.3954 $112.6890
440+ $0.3829 $168.4760
605+ $0.3706 $224.2130
785+ $0.3583 $281.2655
1,050+ $0.3212 $337.2600
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Availability: 4,890 pieces
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