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BSP321PH6327XTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSP321PH6327XTSA1

Part No BSP321PH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 980MA SOT223
Datasheet
BSP321PH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 980mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 380μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 319pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 900 mOhm @ 980mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 109487-BSP321PH6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSP321PH6327XTSA1 CAD Model

Description

BSP321PH6327XTSA1 - Efficient P-Channel MOSFET

The BSP321PH6327XTSA1 is an efficient P-Channel MOSFET, designed to provide optimum control in power-sensitive applications.

  • Efficient power switching systems
  • Solar energy interfaces
  • Telecommunication devices

Features and Benefits:

  • Low threshold voltage simplifies gate drive requirements
  • Compact packaging for efficient thermal management
  • Excellent avalanche and commutation performance
  • Superior ruggedness and reliability in high-stress environments

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7298 $58.3840
190+ $0.5989 $113.7910
290+ $0.5802 $168.2580
400+ $0.5615 $224.6000
520+ $0.5428 $282.2560
695+ $0.4866 $338.1870
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 903 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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