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BSR92PH6327XTSA1

Part No BSR92PH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 250V 140MA SC59  /  P-Channel 250 V 140mA (Ta) 500mW (Tc) Surface Mount PG-SC59-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series SIPMOS®
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 140mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Rds On (Max) @ Id, Vgs 11Ohm @ 140mA, 10V
Vgs(th) (Max) @ Id 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 4.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 109 pF @ 25 V
Power Dissipation (Max) 500mW (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-SC59-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number BSR92PH6327
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names BSR92PH6327XTSA1CT,BSR92PH6327XTSA1TR,BSR92PH6327XTSA1-ND,SP001101038,BSR92PH6327XTSA1DKR
Standard Package 3,000
Win Source Part Number 1049717-BSR92PH6327XTSA1
Ultra Librarian 3D Model Ultra Librarian BSR92PH6327XTSA1 CAD Model

Description

The Infineon Technologies BSL202SNL6327HTSA1 is an N-channel MOSFET that is used in various applications.

  • Maximum Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 7.5A @ 25°C
  • Gate-Source Threshold Voltage: 1.2V @ 30μA
  • Maximum Gate Charge: 8.7nC @ 4.5V
  • Mounting: surface mount
  • Package: PG-TSOP6-6

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7466 $52.2620
165+ $0.6126 $101.0790
255+ $0.5934 $151.3170
350+ $0.5743 $201.0050
455+ $0.5552 $252.6160
605+ $0.4977 $301.1085
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 159,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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