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Same model may have multiple batches, images only for reference.
BSS119E6327 Real Image
Same model may have multiple batches, images only for reference.

BSS119E6327

Part No BSS119E6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 170MA SOT-23
Datasheet
BSS119E6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 50μA
Max Gate Charge 2.5nC @ 10V
Max Input Capacitance 78pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 6 Ohm @ 170mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024484-BSS119E6327
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSS119E6327 CAD Model

Description

The Infineon Technologies BSS119E6327 is a MOSFET transistor that has a maximum power dissipation of 360mW (Ta).

  • Manufacturer: Infineon Technologies
  • Product Name: BSS119E6327
  • Maximum Power Dissipation: 360mW (Ta)
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 170mA (Ta)
  • Maximum Rds On: 6 Ohm @ 170mA, 10V
  • Drive Voltage: 4.5V, 10V
  • Package: PG-SOT23-3
  • Mounting Type: SMD (SMT)
  • ECCN: EAR99
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2405 $58.9225
590+ $0.1974 $116.4660
910+ $0.1912 $173.9920
1,250+ $0.1850 $231.2500
1,615+ $0.1789 $288.9235
2,165+ $0.1603 $347.0495
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Availability: 2,519 pieces
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