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Same model may have multiple batches, images only for reference.
IPP020N06N Real Image
Same model may have multiple batches, images only for reference.

IPP020N06N

Part No IPP020N06N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 29A TO220-3
Datasheet
IPP020N06N Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 29A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 2.8V @ 143μA
Max Gate Charge 106nC @ 10V
Max Input Capacitance 7800pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 214W (Tc)
Maximum Rds On at Id,Vgs 2 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 205234-IPP020N06N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP020N06N CAD Model

Description

The Infineon Technologies 205234-IPP020N06N is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 29A (Ta) or 120A (Tc)
  • Mounting Type: Through hole
  • Packaging: Tube/rail
  • Power Dissipation: 3W (Ta) or 214W (Tc)
  • Gate-Source Threshold Voltage: 2.8V @ 143μA
  • Maximum Gate Charge: 106nC @ 10V
  • Maximum Input Capacitance: 7800pF @ 30V
  • Halogen-Free Standard: Manufactured in compliance with halogen-free standards
  • Popularity: Medium-popularity part
  • Supply and Demand Status: Limited supply and demand status

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45+ $2.5957 $116.8065
69+ $2.5147 $173.5143
95+ $2.4336 $231.1920
123+ $2.3524 $289.3452
165+ $2.1090 $347.9850
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