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BSS123L6327HTSA1

Part No BSS123L6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 170MA SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 50μA
Max Gate Charge 2.67nC @ 10V
Max Input Capacitance 69pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 6 Ohm @ 170mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 114015-BSS123L6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Motor Drive & Control, Power Management
Ultra Librarian 3D Model Ultra Librarian BSS123L6327HTSA1 CAD Model

Description

BSS123L6327HTSA1 High-Temperature N-Channel MOSFET

The BSS123L6327HTSA1 stands out for its capability to operate under high thermal conditions, making it ideal for applications that experience extreme temperature variations.

Features and Benefits:

  • High Temperature Tolerance: Suitable for harsh industrial environments.
  • Compact Form Factor: Optimal for space-limited applications.
  • High Drain Current Capability: Supports greater load currents without performance degradation.

Applications and Projects:

  • Automotive electronics
  • Industrial equipment
  • Robust power supplies

This MOSFET is designed to maintain high reliability and efficiency in high-temperature operations, catering to rigorous electronic needs.

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