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BSS670S2L

Part No BSS670S2L
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 540MA SOT23-3 / N-Channel 55 V 540mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)Cut Tape (CT)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 270mA, 10V
Vgs(th) (Max) @ Id 2V @ 2.7µA
Gate Charge (Qg) (Max) @ Vgs 2.26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 75 pF @ 25 V
Power Dissipation (Max) 360mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 572255-BSS670S2L
Ultra Librarian 3D Model Ultra Librarian BSS670S2L CAD Model

Description

The 572255-BSS670S2L is an N-Channel MOSFET transistor from Infineon Technologies.

  • Series: OptiMOS™
  • Drain to Source Voltage: 55V
  • Continuous Drain Current: 540mA
  • On-Resistance: 650mOhm @ 270mA, 10V
  • Gate Charge: 2.26 nC @ 10V
  • Package: TO-236-3, SC-59, SOT-23-3
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
590+ $0.0982 $57.9380
1,430+ $0.0809 $115.6870
2,210+ $0.0785 $173.4850
3,035+ $0.0762 $231.2670
3,970+ $0.0728 $289.0160
5,265+ $0.0658 $346.4370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 204,000 pieces
MOQ: 590 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

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Shipped from HK warehouse
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