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BSS87L6327

Part No BSS87L6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, N-CH, 240V, 260MA, SOT-89; Transistor Polarity: N Channel; Continuous Dra
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-89-4
Continuous Drain Current (ID) 260 mA
Current Rating 260 mA
Drain to Source Breakdown Voltage 240 V
Drain to Source Resistance 6 Ω
Drain to Source Voltage (Vdss) 240 V
Element Configuration Single
Fall Time 3.5 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 97 pF
Lead Free Yes
Maximum Operating Temperature 150 °C
Max Power Dissipation 1 W
Min Operating Temperature -55 °C
Mount Surface Mount
Nominal Vgs 1.2 V
Number of Elements 1
Number of Pins 3
Power Dissipation 1 W
Rds On Max 6 Ω
REACH SVHC No SVHC
Rise Time 3.5 ns
RoHS Compliant
Threshold Voltage 1.2 V
Turn-Off Delay Time 17.6 ns
Turn-On Delay Time 3.7 ns
Voltage Rating (DC) 240 V
Win Source Part Number 1049750-BSS87L6327
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BSS87L6327 CAD Model

Description

The Infineon Technologies 1049750-BSS87L6327 is an RF transistor with a drain to source voltage (Vdss) of 240V.

  • Drain to Source Voltage (Vdss): 240V
  • Mounting: SMD (SMT)
  • Current Rating: 260mA
  • Package: SOT-89-4
  • Maximum Power Dissipation: 1W

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