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Same model may have multiple batches, images only for reference.
BSZ018NE2LSI Real Image
Same model may have multiple batches, images only for reference.

BSZ018NE2LSI

Part No BSZ018NE2LSI
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOSTM Power-MOSFET
Datasheet
BSZ018NE2LSI Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 25V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 36nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2500pF @ 12V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 2.1W (Ta), 69W (Tc)
Rds On (Maximum) @ Id, Vgs 1.8 mOhm @ 20A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-TSDSON-8-FL
Package 8-PowerTDFN
Win Source Part Number 1154992-BSZ018NE2LSI
Manufacturer Homepage www.infineon.com
Family Name BSZ018NE2LSI
Introduction Date June 15, 2011
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSZ018NE2LSI CAD Model

Description

The BSZ018NE2LSI is a MOSFET transistor manufactured by Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Package: PG-TSDSON-8-FL
  • Mounting Style: SMD
  • Technology: MOSFET
  • Channel Type: N
  • Maximum Power Dissipation: 2.1W (Ta), 69W (Tc)
  • Rds On (Maximum) @ Id, Vgs: 1.8 mOhm @ 20A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 36nC @ 10V
  • Vgs(th) (Maximum) @ Id: 2V @ 250μA
  • Drain Source Voltage: 25V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2500pF @ 12V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Halogen-Free: Compliant

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