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BSZ036NE2LSATMA1

Part No BSZ036NE2LSATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 12 V
Power Dissipation (Max) 2.1W (Ta), 37W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TSDSON-8-FL
Package / Case 8-PowerTDFN
Base Product Number BSZ036
Other Names BSZ036NE2LSCT,BSZ036NE2LSATMA1DKR,BSZ036NE2LSDKR,BSZ036NE2LS,BSZ036NE2LSATMA1TR,BSZ036NE2LSTR,BSZ036NE2LSATMA1CT,SP000854572,BSZ036NE2LSDKR,BSZ036NE2LS,BSZ036NE2LSCT
Standard Package 5,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278286-BSZ036NE2LSATMA1
Ultra Librarian 3D Model Ultra Librarian BSZ036NE2LSATMA1 CAD Model

Description

The Infineon BSZ036NE2LSATMA1 is a single N-channel MOSFET transistor that is part of the OptiMOS™ series.

  • Drain to Source Voltage: 25V
  • Continuous Drain Current @ 25°C: 16A
  • Maximum On-Resistance: 3.6mOhm @ 20A and 10V
  • Gate Threshold Voltage: 2V @ 250μA
  • Maximum Gate Voltage: ±20V
  • Package: 8-PowerTDFN package
  • Gate Charge: 16nC @ 10V
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5667 $51.0030
190+ $0.5302 $100.7380
295+ $0.5119 $151.0105
425+ $0.4753 $202.0025
550+ $0.4571 $251.4050
685+ $0.4388 $300.5780
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,251 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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