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Same model may have multiple batches, images only for reference.
BSZ076N06NS3G Real Image
Same model may have multiple batches, images only for reference.

BSZ076N06NS3G

Part No BSZ076N06NS3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OPTLMOS N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 30 V
Power Dissipation (Max) 2.1W (Ta), 69W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerVDFN
Standard Package 5,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 572312-BSZ076N06NS3G
Ultra Librarian 3D Model Ultra Librarian BSZ076N06NS3G CAD Model

Description

The BSZ076N06NS3G is a N-Channel MOSFET transistor from Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Type: N-Channel MOSFET
  • Series: OptiMOS™ 3
  • Vdss (Drain to Source Voltage): 60 V
  • Id (Continuous Drain Current): 20A @ 25°C
  • Rds On (Max): 7.6mOhm @ 20A, 10V Vgs
  • Qg (Gate Charge): 50 nC @ 10V Vgs
  • Mounting Type: Surface Mount
  • Package: 8-PowerVDFN
  • Operating Temperature Range: -55°C to 150°C
  • Power Dissipation: 2.1W @ Ambient Temperature (Ta), 69W @ Case Temperature (Tc)
  • Status: Active Product Series

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