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Same model may have multiple batches, images only for reference.
BSZ12DN20NS3G Real Image
Same model may have multiple batches, images only for reference.

BSZ12DN20NS3G

Part No BSZ12DN20NS3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description BSZ12DN20 - 12V-300V N-CHANNEL P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 100 V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerTDFN
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 744923-BSZ12DN20NS3G
Ultra Librarian 3D Model Ultra Librarian BSZ12DN20NS3G CAD Model

Description

The 744923-BSZ12DN20NS3G is a single N-Channel MOSFET in the Transistors category.

  • Series: OptiMOS™ 3
  • Manufacturer: Infineon Technologies
  • Package: Bulk (1 piece)
  • Mounting Type: Surface Mountable
  • Drain-to-Source Voltage: 200V
  • Continuous Drain Current: 11.3A @ 25°C
  • On-Resistance: 125mΩ @ 5.7A and 10V gate-source voltage
  • Threshold Voltage: 4V @ 25μA
  • Power Dissipation: 50W @ 25°C
  • Gate Charge: 8.7nC @ 10V gate-source voltage
  • Input Capacitance: 680pF @ 100V drain-source voltage
  • Maximum Gate-Source Voltage: ±20V
  • Temperature Range: -55°C to 150°C
  • HTSUS Code: 8541.29.0095
  • Product Status: Active

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