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Same model may have multiple batches, images only for reference.
BTS121AE3045ANTMA1 Real Image
Same model may have multiple batches, images only for reference.

BTS121AE3045ANTMA1

Part No BTS121AE3045ANTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 100V 22A TO-220AB
Datasheet
BTS121AE3045ANTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Input Capacitance 1500pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 95W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 9.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-220AB
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1024854-BTS121AE3045ANTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BTS121AE3045ANTMA1 CAD Model

Description

The Infineon Technologies BTS121AE3045ANTMA1 is an N-channel MOSFET with a maximum power dissipation of 95W (Tc).

  • Mounting Type: SMD (SMT)
  • Case/Package: TO-220AB
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 22A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Rds On: 100 mOhm @ 9.5A and 4.5V
  • Operating Temperature: -55°C to 150°C
  • Product Category: Discrete Semiconductor Products

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