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Same model may have multiple batches, images only for reference.
BUZ73ALH Real Image
Same model may have multiple batches, images only for reference.

BUZ73ALH

Part No BUZ73ALH
Manufacturer Infineon Technologies
Catalog OEM Parts (A - B)
Description Mosfet N-ch 200V 5.5A TO220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-220-3
Continuous Drain Current (ID) 5.5 A
Drain to Source Breakdown Voltage 200 V
Drain to Source Resistance 600 mΩ
Drain to Source Voltage (Vdss) 200 V
Element Configuration Single
Fall Time 40 ns
Gate to Source Voltage (Vgs) 20 V
Halogen Free Halogen Free
Input Capacitance 840 pF
Maximum Operating Temperature 150 °C
Max Power Dissipation 40 W
Min Operating Temperature -55 °C
Number of Pins 3
Power Dissipation 40 W
Radiation Hardening No
Rds On Max 600 mΩ
Rise Time 60 ns
RoHS Compliant
Turn-Off Delay Time 100 ns
Turn-On Delay Time 15 ns
Win Source Part Number 1050121-BUZ73ALH
Categories OEM Parts(A-B)
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BUZ73ALH CAD Model

Description

The Infineon Technologies BUZ73ALH is a single N-Channel MOSFET with a drain-source voltage of 200V and a continuous drain current of 5.5A.

  • Drain-Source Voltage: 200V
  • Continuous Drain Current: 5.5A
  • Maximum Power Dissipation: 40W
  • Maximum Gate-Source Voltage: 20V
  • Gate-Source Threshold Voltage: 2V @ 14μA
  • Maximum Gate Charge: 840pF
  • Maximum Rds On: 600mΩ
  • Package: TO-220-3
  • Operating Temperature Range: -55°C to 150°C
  • Halogen-Free: Yes

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